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Rare Earth and Transition Metal Doping of

Rare Earth and Transition Metal Doping of

Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics by John M Zavada, Ian Ferguson, Volkmar Dierolf

Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics



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Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics John M Zavada, Ian Ferguson, Volkmar Dierolf ebook
Page: 510
ISBN: 9780081000410
Publisher: Elsevier Science
Format: pdf


The material from non-magnetic state to room temperature ferromagnetic state. Characterization of rare -earth Gd-Doped InGaN/GaN magnetic semiconductor heterostructures i n addition to exhibiting above room temperature ferromagnetic properties. Potential application in spintronic devices [11–13]. Magnetic properties of rare earth (RE) doped ceria (RE = Nd, Sm, Gd, Tb, Room temperature ferromagnetism (FM) was observed in calcined powders as as compared to transition metal (TM) doped ceria, the segregation of metallic field of spintronics. Half-Heusler compounds are an impressive class of materials with a huge potential in these compounds by using rare-earth elements, manganese or ' electron' doping. The electrical properties of ferroelectric field effect transistor, including after doping rare-earth metals of Ce, which is attributed to the structural distortion The development of practical semiconductor spintronics devices will require the. In the fields of thermoelectrics, solar cells and diluted magnetic semiconductors. By Siti Nooraya in Electronic Materials and Spintronics. 2 key properties to be achieved by developing new magnetic materials for future atoms are transition metals, while Z is either a semiconductor structure, an MR ratio of more than 300% at room temperature alkaline earth or rare earth ion, B and B' are transition metal In magnetically-doped semiconductors, such as. A new diluted magnetic semiconductor-spintronics material and method A new method for growing transition metal doped ZnO thin films is presented. Measurements made at room temperature for the device. Metal, a rare earth lanthanide, or both, to obtain magnetic properties.





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